Semiconductor materials are present in a vast collection of devices, ranging from transistors to solar cells, multiprocessors to light emitting diodes. In order to improve further the next generation of such devices, researchers need to study the fundamental properties of semiconductor materials, and perform quality control measurements. To do so, accurate characterization systems and methods are paramount, and Photon etc.’s hyperspectral imagers possess the essential modalities to perform these tasks through the rapid collection of highly valuable spatial and spectral data.
The intrinsic specificity of Raman scattering confers to this imaging platform the ability to measure the uniformity and morphology of a wide variety of materials. It also allows a fast identification of the composition and stoichiometry, while providing spatial distribution of stresses and constraints. This platform was successfully used to characterise various properties of chalcogenide glasses, GaAs and GeSn/Ge/Si thin films, the identification of MoS2 layers, and the analysis of constraints in a Si wafer covered by SiO2.
Photoluminescence and electroluminescence are also widely used characterisation technique, providing a fast spatial distribution of key properties of semiconductors samples. It was successfully employed to characterise different defects present in SiC pin diodes and to study the uniformity of opto-electronics properties in CIGS, CIS and GaAs solar cells.
Photon etc’s hyperspectral imager can be efficiently used to investigate spatial inhomogeneities, defects and constraints in a wide range of materials. This state-of-the-art tool is a valuable asset to perform rapid quality control or studies of fundamental properties of materials.
For more details and results from our collaborators, see the application notes below.
